This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Over−Voltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

• Ideal for Coil−on−Plug Applications

• DPAK Package Offers Smaller Footprint for Increased Board Space

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

• Low Threshold Voltage Interfaces Power Loads to Logic or

Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Emitter Ballasting for Short−Circuit Capability

• This is a Pb−Free Device