1. General description

The NGD4300-Q100 is a high-performance gate

driver designed to drive both high-side and low-side

N-channel MOSFETs in a synchronous buck or a halfbridge

configuration. The floating high-side driver

can work with rail voltages up to 120 V and uses a

bootstrap supply with an integrated diode. Both lowside

and high-side output drivers have an independent

undervoltage lockout (UVLO) circuit which disables

the output driver when the driver supply is below its

threshold level. The NGD4300-Q100 accepts input

control signals complying with both TTL and CMOS

signaling as low as 2.5 V (±10%). The low voltage,

provided by an internal voltage regulator, is used to

supply circuitry in signal paths controlling the lowside

and high-side power switches. This enables a

low-power operation and a better controlled driver

performance irrespective of the IC supply voltage.

Excellent delay matching of 1 ns typical is achieved for

the low-side and high-side signal paths. The 4 A peak

source and sink current capability of the driver’s output

stage guarantees short rise- and fall-times even at high

loads.

The NGD4300-Q100 is offered in the HSO8 package,

and operates over an extended −40 °C to +125 °C

temperature range.

This product has been qualified to the Automotive

Electronics Council (AEC) standard Q100 (Grade 1)

and is suitable for use in automotive applications.

2. Features and benefits

• Automotive product qualification in accordance with

AEC-Q100 (Grade 1)

• Specified from -40 °C to +125 °C

• Input signals complying with both TTL and CMOS

signaling of 2.5 V, 3.3 V, and 5 V

• Output signals with 1 ns propagation delay

matching (typical)

• Propagation times of 13 ns (typical)

• Switching frequency up to 1 MHz

• 4 A peak source and 5 A sink current capability of

the gate driver output stage

• 4 ns rise and 3.5 ns fall times with 1000 pF loads

• Bootstrap supply voltage up to 120 V using an

integrated bootstrap diode

• 8 V to 17 V VDD operation range

• Undervoltage protection for both low-side and highside

supplies

• Low-power consumption (IDDO) of 0.6 mA (typical)

• 8 pin HSO8 package

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2

exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3

exceeds 1000 V

3. Applications

• Current-fed, push-pull converters

• Two-switch forward power converters

• Class-D audio amplifiers

• Solid-state motor drives