位置：首页 > IC中文资料 > NXH40B120MNQ1SNG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NXH40B120MNQ1SNG | Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package The NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 40 m SiC MOSFETs • Low R | ONSEMI 安森美半导体 |   | |
NXH40B120MNQ1SNG | 3 Channel Boost Q1 Power Module 文件：923.94 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | |
NXH40B120MNQ1SNG | 封装/外壳：模块 包装：托盘 描述：30KW Q1BOOST FULL SIC 分立半导体产品 晶体管 - IGBT - 模块 | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package The NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 40 m SiC MOSFETs • Low R | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
ON |
23+ |
240 |
全新、原装 |
||||
ONSEMI |
22+ |
SMD |
36 |
||||
onsemi |
2025+ |
55740 |
|||||
onsemi |
23+ |
标准封装 |
2000 |
全新原装正品现货直销 |
|||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
24+ |
NA |
25000 |
ON全系列可订货 |
|||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
ON |
23+ |
原厂原封 |
21 |
订货1周 原装正品 |
|||
Infineon |
23+ |
Tray |
500 |
原装正品 |
NXH40B120MNQ1SNG芯片相关品牌
NXH40B120MNQ1SNG规格书下载地址
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NXH40B120MNQ1SNG数据表相关新闻
NXH40B120MNQ0SNG
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2019-8-21
DdatasheetPDF页码索引
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