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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NX7563JB-BC | LASERDIODEInGaAsPMQWDC-PBHPULSEDLASERDIODEMODULE1550nmOTDRAPPLICATION DESCRIPTION TheNX7563JB-BCisa1550nmMultipleQuantumWell(MQW)structurepulsedlaserdiodeDIPmodulewithsinglemodefiberandinternalthermoelectriccooler.Itisdesignedforlightsourcesofopticalmeasurementequipment(OTDR). FEATURES •HighoutputpowerPf=135mWMIN.@IFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NX7563JB-BC | InGaAsPMQWDC-PBHPULSEDLASERDIODEMODULE1550nmOTDRAPPLICATION 文件：978.87 Kbytes Page：6 Pages | CEL California Eastern Laboratories |  | |
LASERDIODEInGaAsPMQWDC-PBHPULSEDLASERDIODEMODULE1550nmOTDRAPPLICATION 文件：152.99 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：14-DIP 模块 包装：散装 描述：LASER DIODE 1550NM 135MW 14DIP 光电器件 激光二极管，模块 | CEL California Eastern Laboratories | | | |
InGaAsPMQWDC-PBHPULSEDLASERDIODEMODULE1550nmOTDRAPPLICATION 文件：978.87 Kbytes Page：6 Pages | CEL California Eastern Laboratories | | | |
Signalprocessingcircuitfor2-DPSD Signalprocessingcircuitfor2-DPSD Signalprocessingcircuitdesignedtofacilitateoperationof2-DPositionSensitiveDetector Features ●Nocomplicatedadjustmentrequired Positionmeasurementcanbemadesimplybymounting2-DPSD. ●Outputvoltagedirectlyrepresentingtheposi | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 |  | | |
MULTILAYERCERAMICCHIPCAPACITORS Features •Highcapacitancehasbeenachievedthroughprecisiontechnologiesthatenabletheuseofmultiplethinnerceramicdielectriclayers. •Amonolithicstructureensuressuperiormechanicalstrengthandreliability. •LowESLandexcellentfrequencycharacteristicsallowforacircuitde | TDKTDK Corporation 东电化（中国）投资有限公司 |  | | |
DUAL16-/14-/12-BIT,ULTRALOW-GLITCH,LOW-POWER,BUFFERED,VOLTAGE-OUTPUT 文件：1.31609 Mbytes Page：56 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) |  | | |
DUAL16-/14-/12-BIT,ULTRALOW-GLITCH,LOW-POWER,BUFFERED,VOLTAGE-OUTPUTDACWITH2.5-V,4-PPM/째CINTERNALREFERENCEINSMALL3-MM횞3-MMSON 文件：1.88265 Mbytes Page：58 Pages | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
DUAL16-/14-/12-BIT,ULTRALOW-GLITCH,LOW-POWER,BUFFERED,VOLTAGE-OUTPUT 文件：1.31609 Mbytes Page：56 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | | |
NX7563JB-BC产品属性
- 类型
描述
- 型号
NX7563JB-BC
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
NDK |
24+ |
N/A |
5000 |
只做原装正品现货 |
|||
NDK |
22+ |
SMD |
185023 |
全新原装正品公司现货可免费送样可含税-可BOM配单 |
|||
5X7SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NDK |
22+ |
NA |
12800 |
本公司只做进口原装!优势低价出售! |
|||
NDK |
2021+ |
N/A |
6800 |
只有原装正品 |
|||
NDK |
23+ |
SMD |
29014 |
全新原装现货,专业代理热卖 |
|||
NDK |
标准封装 |
58998 |
一级代理原装正品现货期货均可订购 |
||||
DIODES(美台) |
23+ |
SMD70506P |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
NDK |
22+ |
NA |
10000 |
绝对全新原装现货热卖 |
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NX7563JB-BC规格书下载地址
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2020-8-13
DdatasheetPDF页码索引
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