LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment (OTDR). FEATURES • High output power Pf = 135 mW MIN. @ IFP

InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

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Optoelectronics

LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

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InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

文件：978.87 Kbytes Page：6 Pages

封装/外壳：14-DIP 模块 包装：散装 描述：LASER DIODE 1550NM 135MW 14DIP 光电器件 激光二极管，模块

Signal processing circuit for 2-D PSD

Signal processing circuit for 2-D PSD Signal processing circuit designed to facilitate operation of 2-D Position Sensitive Detector Features ● No complicated adjustment required Position measurement can be made simply by mounting 2-D PSD. ● Output voltage directly representing the posi

MULTILAYER CERAMIC CHIP CAPACITORS

Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency characteristics allow for a circuit de

DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

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DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

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