1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. FEATURES • Optical output power Po = 13.0 mW • Low threshold current lth = 7 mA • Differential Effici

LASER DIODE

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

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2.5 V to 5.5 V, 230uA, Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5332/AD5333/AD5342/AD5343 are dual 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 230 µA at 3 V, and feature a power-down pin, PD that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can dr

2.5 V to 5.5 V, 230 uA, Dual Rail-to-Rail Voltage Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5303/AD5313/AD5323 are dual 8-/10-/12-bit buffered voltage output DACs in a 16-lead TSSOP package that operate from a single 2.5 V to 5.5 V supply, consuming 230 μA at 3 V. Their on-chip output amplifiers allow the outputs to swing rail-torail with a slew rate of 0.7 V/μ

T-1 Right Angle LED Assembly

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T-1 Right Angle LED Assembly

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20 (7/28) AWG Tinned Copper

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