DESCRIPTION

The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

FEATURES

• Optical output power Po = 13.0 mW

• Low threshold current lth = 7 mA

• Differential Efficiency ηd = 0.5 W/A

• Wide operating temperature range TC = −40 to +85°C

• InGaAs monitor PIN-PD

• CAN package φ 5.6 mm

• Focal point 6.35 mm

APPLICATION

• FTTH PON (B-PON, G-PON, GE-PON 10 km) system