LASER DIODE

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

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1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

文件：283.29 Kbytes Page：7 Pages

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

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NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

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2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5330/AD5331/AD5340/AD53411 are single 8-/10-/12- bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 115 μA at 3 V and feature a power-down mode that further reduces the current to 80 nA. The devices incorporate an on-chip output buffer that can drive the

2.5 V to 5.5 V, 230uA, Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5332/AD5333/AD5342/AD5343 are dual 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 230 µA at 3 V, and feature a power-down pin, PD that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can dr

RFID Transponder Coils

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2.5 V to 5.5 V, 500 uA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs

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