40 V, 4.2 m, 120 A, Single N?묬hannel

文件：118.76 Kbytes Page：6 Pages

Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel

文件：113.96 Kbytes Page：6 Pages

功率 MOSFET，40V，120A，4.2mΩ，单 N 沟道，SO8-FL，逻辑电平

Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel

文件：113.96 Kbytes Page：6 Pages

40 V, 4.2 m, 120 A, Single N?묬hannel

文件：118.76 Kbytes Page：6 Pages

Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel

文件：113.96 Kbytes Page：6 Pages

40 V, 4.2 m, 120 A, Single N?묬hannel

文件：118.76 Kbytes Page：6 Pages

Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel

文件：113.96 Kbytes Page：6 Pages

BiMOS II 32-BIT SERIAL-INPUT, LATCHED DRIVERS

Intended originally to drive thermal printheads, the UCN5832A and UCN5832EP have been optimized for low output-saturation voltage, high-speed operation, and pin configurations most convenient for the tight space requirements of high-resolution printheads. These integrated circuits can also be used

BiMOS II 32-BIT SERIAL-INPUT, LATCHED DRIVERS

Intended originally to drive thermal printheads, the UCN5832A and UCN5832EP have been optimized for low output-saturation voltage, high-speed operation, and pin configurations most convenient for the tight space requirements of high-resolution printheads. These integrated circuits can also be used

AFE5832 32-Channel Ultrasound AFE With 35-mW/Channel Power, 2.1 nV/√Hz Noise, 12-Bit, 40-MSPS or 10-Bit, 50-MSPS Output, Passive CW Mixer and LVDS Interface

1 Features • 32-Channel, AFE for Ultrasound Applications: – Input Attenuator, LNA, LPF, ADC, and CW Mixer – Digital Time Gain Compensation (DTGC) – Total Gain Range: 12 dB to 51 dB – Linear Input Range: 800 mVPP • Input Attenuator With DTGC: – 8-dB to 0-dB Attenuation With 0.125-dB Step –

32-Channel Ultrasound AFE With 42-mW/Channel Power, 12-Bit, 40-MSPS or 10-Bit, 50-MSPS Output, Passive CW Mixer and LVDS Interface

文件：876.03 Kbytes Page：9 Pages

32-Channel Ultrasound AFE With 18.5-mW/Channel Power, 4-nV/?숰z, 12-Bit, 40-MSPS or 10-Bit, 50-MSPS Output and Passive CW Mixer

文件：178.47 Kbytes Page：8 Pages