MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Channel, SO8-FL, Logic Level.

MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 m, 71 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H