沟槽肖特基整流器，45V，2A

The NTS245SF is Low Forward Voltage Trench-based Schottky Rectifier.This new technology allows low forward voltage drop without the high reverse leakage trade-off experienced with planar Schottky rectifiers.This platform also provides very stable switching characteristics over a wide temperature ran • Fine Lithography Trench−based Schottky Technology for Very Low\n• Fast Switching with Exceptional Temperature Stability\n• Higher Efficiency for Achieving Regulatory Compliance\n• High Surge Capability\n• These are Pb−Free and Halide−Free Devices\n;

Trench Schottky Rectifier, 45V, 2A Very Low Leakage

The NRVTS245ESF is Low Leakage Trench-based Schottky Rectifier.This new technology allows low forward voltage drop without the high reverse leakage trade-off experienced with planar Schottky rectifiers.This platform also provides very stable switching characteristics over a wide temperature range an • Fine Lithography Trench−based Schottky Technology for Very Low\n• Forward Voltage and Low Leakage\n• Fast Switching with Exceptional Temperature Stability\n• Low Power Loss and Lower Operating Temperature\n• Higher Efficiency for Achieving Regulatory Compliance\n• Low Thermal Resistance\n• High Su;

Very Low Forward Voltage Trench-based Schottky Rectifier

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Very Low Forward Voltage Trench-based Schottky Rectifier

文件：112.52 Kbytes Page：5 Pages

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：64.86 Kbytes Page：5 Pages

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：64.86 Kbytes Page：5 Pages

封装/外壳：SOD-123F 包装：散装 描述：DIODE SCHOTTKY 45V 2A SOD123FL 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-123F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 45V 2A SOD123FL 分立半导体产品 二极管 - 整流器 - 单

Very Low Forward Voltage Trench-based Schottky Rectifier

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NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

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VHF power MOS transistor

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