Trench Schottky Rectifier, 45V, 2A Very Low Leakage

The NRVTS245ESF is Low Leakage Trench-based Schottky Rectifier.This new technology allows low forward voltage drop without the high reverse leakage trade-off experienced with planar Schottky rectifiers.This platform also provides very stable switching characteristics over a wide temperature range an • Fine Lithography Trench−based Schottky Technology for Very Low\n• Forward Voltage and Low Leakage\n• Fast Switching with Exceptional Temperature Stability\n• Low Power Loss and Lower Operating Temperature\n• Higher Efficiency for Achieving Regulatory Compliance\n• Low Thermal Resistance\n• High Su;

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：112.52 Kbytes Page：5 Pages

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：112.52 Kbytes Page：5 Pages

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

VHF power MOS transistor

文件：91.6 Kbytes Page：12 Pages