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20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

UTC

友顺

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

IXYS

艾赛斯

Fast Switching

文件:95.42 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650-V (D-S) Super Junction MOSFET

文件:1.15549 Mbytes Page:11 Pages

VBSEMI

微碧半导体

20A 600V N-channel enhanced field effect transistor

文件:833.85 Kbytes Page:6 Pages

YFWDIODE

佑风微

更新时间:2025-11-5 10:21:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
TO220/
20000
全新原装假一赔十
INFIENON
TO-247
3200
原装长期供货!
VBsemi
24+
TO252
5000
只做原装公司现货
INFINEON
24+
TO-3P
9500
郑重承诺只做原装进口现货
FAIRCHILD/华
23+24
TO-3P(N)
96580
主营:存储.逻辑.放大.电源.接口.驱动.充电. 功放IC.
英飞凌
22+
TO-220
8000
原装正品支持实单
INFINEON
2010+
TO-247
3000
INFINEON
0728+
TO-263
82
优势
INF进口原
17+
220-220F
6200
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询

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