NTMFS4927N价格

参考价格:¥0.7876

型号:NTMFS4927NT1G 品牌:ONSemi 备注:这里有NTMFS4927N多少钱,2026年最近7天走势,今日出价,今日竞价,NTMFS4927N批发/采购报价,NTMFS4927N行情走势销售排行榜,NTMFS4927N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTMFS4927N

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

NTMFS4927N

Single N-Channel Power MOSFET 30V, 38A, 7.3mΩ

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

ONSEMI

安森美半导体

Automotive Half-Bridge MOSFET Driver

文件:857.57 Kbytes Page:40 Pages

ALLEGRO

Automotive Half-Bridge MOSFET Driver

文件:857.57 Kbytes Page:40 Pages

ALLEGRO

Dual P-Channel MOSFET uses advanced trench technology

文件:1.17889 Mbytes Page:4 Pages

DOINGTER

杜因特

Dual P-Channel 30-V (D-S) MOSFET

文件:1.02672 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Standard CMOS Voltage Detector IC

文件:269.09 Kbytes Page:10 Pages

ROHM

罗姆

NTMFS4927N产品属性

  • 类型

    描述

  • 型号

    NTMFS4927N

  • 功能描述

    MOSFET TRENCH 3.1 30V 9 Ohm NCH

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
NA/
29750
原厂直销,现货供应,账期支持!
ON
2016+
QFN
3000
只做原装,假一罚十,公司可开17%增值税发票!
ON
24+
QFN-8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ON
23+
NA
20632
专做原装正品,假一罚百!
ON/安森美
22+
SO-8FL
3000
原装正品,支持实单
ON
SOP-8FL
1500
原装长期供货!
onsemi(安森美)
24+
SO-8FL
8850
支持大陆交货,美金交易。原装现货库存。
ON/安森美
24+
DFN8
21574
郑重承诺只做原装进口现货
ON
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
MINI
23+
SMT86
5000
原装正品,假一罚十

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