型号 功能描述 生产厂家 企业 LOGO 操作
NTLGD3502N

Power MOSFET 20 V, 5.8 A/4.6 A Dual N?묬hannel, DFN6 3x3 mm Package

文件:87.65 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NTLGD3502N

双 N 沟道,功率 MOSFET,20V

ONSEMI

安森美半导体

Power MOSFET 20 V, 5.8 A/4.6 A Dual N?묬hannel, DFN6 3x3 mm Package

文件:87.65 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 20 V, 5.8 A/4.6 A Dual N?묬hannel, DFN6 3x3 mm Package

文件:87.65 Kbytes Page:8 Pages

ONSEMI

安森美半导体

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • The plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge overload ratings to 400 Amperes .

PANJIT

強茂

IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES ● Plastic Case With Heatsink For Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● The plastic package has Underwriters Laboratory Flammability Classification 94V-O

PANJIT

強茂

4-BIT SINGLE CHIP MICRO CONTROLLER???

文件:1.43278 Mbytes Page:42 Pages

NJRC

日本无线

4-BIT SINGLE CHIP MICRO CONTROLLER???

文件:1.43278 Mbytes Page:42 Pages

NJRC

日本无线

4-BIT SINGLE CHIP MICRO CONTROLLER???

文件:1.43278 Mbytes Page:42 Pages

NJRC

日本无线

NTLGD3502N产品属性

  • 类型

    描述

  • 型号

    NTLGD3502N

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package

更新时间:2026-3-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
6-DFN(3x3)
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
6-DFN(3x3)
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
25+23+
QFN
18338
绝对原装正品全新进口深圳现货
ON
22+
DFN-6
3000
原装正品,支持实单
三年内
1983
只做原装正品
ON
22+
QFN
20000
公司只做原装 品质保障
ON
24+
NA
3000
进口原装 假一罚十 现货
原装
25+
DFNWB2*2-6L
20300
原装特价NTLGD3502N即刻询购立享优惠#长期有货
ON
15+
QFN
1
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
2025+
DFN-3x3
5000
原装进口,免费送样品!

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