Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

MOSFET - SiC Power, Single N-Channel 900 V, 60 m, 46 A

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Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V • Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 88 nC) • High Speed Switching with Low Capacitance (Coss = 115 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−F

MOSFET - SiC Power, Single N-Channel, D2PAK-7L 900 V, 60 m, 44 A

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MOSFET - SiC Power, Single N-Channel, D2PAK-7L

文件：709.97 Kbytes Page：8 Pages