Silicon Dual Schottky Rectifier

Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: 20 Amps Total (10 Amps Pre Diode Leg) Guarding for Stress Protection Low Forward Voltage +150°C Operating

Schottky Barrier

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 9.5A, RDS(ON) = 12.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

Field Service Kit, Red Large, ESD

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