SUBMINIATURE PENTODE

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SUBMINIATURE PENTODE

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 9.5A, RDS(ON) = 12.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

Field Service Kit, Red Large, ESD

文件：62.73 Kbytes Page：2 Pages

Silicon Monolithic Integrated Circuit

文件：362.07 Kbytes Page：5 Pages

Mulitifunction Backlight LED Driver for Small LCD Panels (Charge Pump Type)

文件：821.71 Kbytes Page：52 Pages