型号 功能描述 生产厂家&企业 LOGO 操作
NTE5870

Silicon Power Rectifier Diode, 12 Amp

Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Voltage Available

NTE

NTE5870

Silicon Power Rectifier Diode, 12 Amp, DO4

Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Voltage Available

NTE

NTE5870

Silicon Power Rectifier Diode, 12 Amp, DO4

Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Voltage Available

NTE

Wide bandwidth analog switch IC

■ Overview The AN5870K is a wide bandwidth analog switch IC of 300 MHz operation. It is usable for RGB signal and horizontal/vertical synchronizing signals, and it has a built-in 75 Ω driver for video signal. In addition, it has also realized a high speed operation by the adoption of CMOS process

Panasonic

松下

Wide bandwidth analog switch IC

■ Overview The AN5870K is a wide bandwidth analog switch IC of 300 MHz operation. It is usable for RGB signal and horizontal/vertical synchronizing signals, and it has a built-in 75 Ω driver for video signal. In addition, it has also realized a high speed operation by the adoption of CMOS process

Panasonic

松下

World wide input, and built in PFC AC input, and isolated High-power LED Driver for Illumination

World wide input, and built in PFC AC input, and isolated High-power LED Driver for Illumination

ROHM

罗姆

N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance • Ultrahigh-speed switching • 2.5V driv

SANYOSanyo Semicon Device

三洋三洋电机株式会社

Common supply manifold

文件:97.49 Kbytes Page:1 Pages

FESTOFesto Corporation.

费斯托

NTE5870产品属性

  • 类型

    描述

  • 型号

    NTE5870

  • 制造商

    NTE Electronics

  • 功能描述

    RECTIFIER 50V 12A DO-4 CATHODE CASE

  • 制造商

    NTE Electronics

  • 功能描述

    Bulk

  • 制造商

    NTE Electronics

  • 功能描述

    R-50 PRV- 12A CATH CASE

  • 制造商

    NTE Electronics

  • 功能描述

    DIODE; Diode

  • Type

    Standard Recovery; Diode

  • Configuration

    Single; Repetitive Reverse Voltage Vrrm

  • Max

    50V; Forward Current

  • If(AV)

    12A; Forward Voltage VF

  • Max

    1.26V; Forward Surge Current Ifsm

  • Max

    280A; Diode Case

  • Style

    DO-4 ;RoHS

  • Compliant

    Yes

  • 制造商

    NTE Electronics

  • 功能描述

    Diode 50V 12A 2-Pin DO-4

更新时间:2025-8-7 19:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NTE
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
NTE
25+
电联咨询
7800
公司现货,提供拆样技术支持
NTE
23+
39500
原厂授权一级代理,专业海外优势订货,价格优势、品种
NTE
2023+
MODULE
2140
主打螺丝模块系列
187
全新原装 货期两周
2022+
183
全新原装 货期两周

NTE5870数据表相关新闻