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NTE54价格
参考价格:¥24.5341
型号:NTE54000 品牌:NTE 备注:这里有NTE54多少钱,2025年最近7天走势,今日出价,今日竞价,NTE54批发/采购报价,NTE54行情走势销售排行榜,NTE54报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTE54 | Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: • DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC | NTE | ||
NTE54 | Complementary Transistors | NTE | ||
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam | NTE | |||
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam | NTE | |||
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam | NTE | |||
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam | NTE | |||
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam | NTE | |||
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam | NTE | |||
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam | NTE | |||
Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and w | NTE | |||
Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and w | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features: | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features: | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . . | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . . | NTE | |||
Silicon Controlled Rectifier (SCR) for TV Power Supply Switching Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high–speed switching applications such as power inverters, switching regulators, and high–current pulse applications. This device features fast turn–off, high dv/dt, and high di/dt characteristic | NTE | |||
Silicon Controlled Rectifier (SCR) Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switc | NTE | |||
Silicon Controlled Rectifier (SCR) 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . | NTE | |||
Silicon Controlled Rectifier (SCR) 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . | NTE | |||
Silicon Controlled Rectifier (SCR) 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. | NTE | |||
Silicon Controlled Rectifier (SCR) 800V, 10A, Isolated Tab Applications: • Temperature Control • Motor Control • Transformerless Power Supply Regulators • Relay and Coil Pulsing • Power Supply Crowbar Protection | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are | NTE | |||
Silicon Controlled Rectifier (SCR) Description: The NTE5460 is designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supply crowbar circuits. Features: • Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices | NTE | |||
Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: • Uniform Low–Level Noise–Immune Gate Triggering • Low Forward “ON” Voltage • High Surge–Cur | NTE | |||
Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: • Uniform Low–Level Noise–Immune Gate Triggering • Low Forward “ON” Voltage • High Surge–Cur | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass | NTE | |||
Silicon Controlled Rectifier (SCR) Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass | NTE | |||
Silicon Controlled Rectifier (SCR) Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass | NTE | |||
Silicon Controlled Rectifier (SCR) Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass | NTE | |||
Silicon Controlled Rectifier (SCR) Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass | NTE | |||
Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass | NTE | |||
Silicon Controlled Rectifier (SCR) 12 Amp Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. | NTE |
NTE54产品属性
- 类型
描述
- 型号
NTE54
- 制造商
NTE Electronics
- 功能描述
TRANSISTOR - NPN AF POWER AMP TO220 CASE
- 制造商
NTE Electronics
- 功能描述
BIPOLAR TRANSISTOR NPN 150V TO-220
- 制造商
NTE Electronics
- 功能描述
BIPOLAR TRANSISTOR, NPN, 150V, TO-220
- 制造商
NTE Electronics
- 功能描述
T-NPN-AF PWR AMP
- 制造商
NTE Electronics
- 功能描述
BIPOLAR TRANSISTOR, NPN, 150V, TO-220; Transistor
- Polarity
NPN; Collector Emitter Voltage
- V(br)ceo
150V; Transition Frequency Typ
- ft
30MHz; Power Dissipation
- Pd
50W; DC Collector
- Current
8A; DC Current Gain
- hFE
40; No. of
- Pins
3 ;RoHS
- Compliant
Yes
- 制造商
NTE Electronics
- 功能描述
Trans GP BJT NPN 150V 8A 3-Pin(3+Tab) TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NTE |
23+ |
39440 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NTE |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TE/泰科 |
2508+ |
/ |
226570 |
一级代理,原装现货 |
|||
NTE ELECTRONICS |
2023+ |
MODULE |
147 |
主打螺丝模块系列 |
|||
NA |
23+ |
NA |
6500 |
只做原装正品现货或订货假一赔十! |
|||
NTE54 |
25+ |
1 |
1 |
||||
NTE |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NTE |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
2022+ |
31 |
全新原装 货期两周 |
NTE54规格书下载地址
NTE54参数引脚图相关
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- NTE5426
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- NTE5411
- NTE5410
- NTE5409
- NTE5408
- NTE5406
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- NTE5402
- NTE5401
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- NTE5394
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- NTE5392
- NTE5391
- NTE5390
- NTE5375
- NTE5374
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- NTE5344
- NTE5342
- NTE5340
- NTE5338
- NTE5335
- NTE5334SM
- NTE5334
- NTE5332
- NTE5331
- NTE5328W
- NTE5328
- NTE5327W
- NTE5327
- NTE5324W
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- NTE5318
- NTE5316
- NTE5315
- NTE5313
- NTE5312
NTE54数据表相关新闻
NTJD4158CT1G
NTJD4158CT1G
2023-3-15NTD2955T4G
NTD2955T4G
2022-7-28NTHD4502NT1G
NTHD4502NT1G
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NTJD4001NT2G
2021-9-14NTD3055L104T4G原装现货
NTD3055L104T4G原装现货
2019-9-12NTD5865NLT4G公司原装正品现货
NTD5865NLT4G公司原装正品现货
2019-8-8
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