NTE54价格

参考价格:¥24.5341

型号:NTE54000 品牌:NTE 备注:这里有NTE54多少钱,2025年最近7天走势,今日出价,今日竞价,NTE54批发/采购报价,NTE54行情走势销售排行榜,NTE54报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTE54

Silicon Complementary Transistors High Frequency Driver for Audio Amplifier

Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: • DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC

NTE

NTE54

Complementary Transistors

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

NTE

Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate

Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millam

NTE

Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate

Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and w

NTE

Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate

Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and w

NTE

Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate

Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features:

NTE

Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate

Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features:

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . .

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . .

NTE

Silicon Controlled Rectifier (SCR) for TV Power Supply Switching

Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high–speed switching applications such as power inverters, switching regulators, and high–current pulse applications. This device features fast turn–off, high dv/dt, and high di/dt characteristic

NTE

Silicon Controlled Rectifier (SCR) Sensitive Gate

Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switc

NTE

Silicon Controlled Rectifier (SCR) 7 Amp

Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE

Silicon Controlled Rectifier (SCR) 7 Amp

Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE

Silicon Controlled Rectifier (SCR) 7 Amp

Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required.

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required.

NTE

Silicon Controlled Rectifier (SCR) 800V, 10A, Isolated Tab

Applications: • Temperature Control • Motor Control • Transformerless Power Supply Regulators • Relay and Coil Pulsing • Power Supply Crowbar Protection

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package designed for high–volume consumer phase–control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltag

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

NTE

Silicon Controlled Rectifier (SCR)

Description: The NTE5460 is designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supply crowbar circuits. Features: • Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supplies; or wher ever half–wave silicon gate–controlled, solid–state devices are needed. These devices

NTE

Silicon Controlled Rectifier (SCR) 5 Amp

Description: The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: • Uniform Low–Level Noise–Immune Gate Triggering • Low Forward “ON” Voltage • High Surge–Cur

NTE

Silicon Controlled Rectifier (SCR) 5 Amp

Description: The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: • Uniform Low–Level Noise–Immune Gate Triggering • Low Forward “ON” Voltage • High Surge–Cur

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass

NTE

Silicon Controlled Rectifier (SCR)

Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass

NTE

Silicon Controlled Rectifier (SCR)

Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass

NTE

Silicon Controlled Rectifier (SCR)

Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass

NTE

Silicon Controlled Rectifier (SCR)

Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass

NTE

Silicon Controlled Rectifier (SCR) 10 Amp

Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC control applications such as motor controls, heating controls, power supplies, or wherever half–wave silicon gate–controlled, solid–state devices are needed. Features: • Glass

NTE

Silicon Controlled Rectifier (SCR) 12 Amp

Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required.

NTE

NTE54产品属性

  • 类型

    描述

  • 型号

    NTE54

  • 制造商

    NTE Electronics

  • 功能描述

    TRANSISTOR - NPN AF POWER AMP TO220 CASE

  • 制造商

    NTE Electronics

  • 功能描述

    BIPOLAR TRANSISTOR NPN 150V TO-220

  • 制造商

    NTE Electronics

  • 功能描述

    BIPOLAR TRANSISTOR, NPN, 150V, TO-220

  • 制造商

    NTE Electronics

  • 功能描述

    T-NPN-AF PWR AMP

  • 制造商

    NTE Electronics

  • 功能描述

    BIPOLAR TRANSISTOR, NPN, 150V, TO-220; Transistor

  • Polarity

    NPN; Collector Emitter Voltage

  • V(br)ceo

    150V; Transition Frequency Typ

  • ft

    30MHz; Power Dissipation

  • Pd

    50W; DC Collector

  • Current

    8A; DC Current Gain

  • hFE

    40; No. of

  • Pins

    3 ;RoHS

  • Compliant

    Yes

  • 制造商

    NTE Electronics

  • 功能描述

    Trans GP BJT NPN 150V 8A 3-Pin(3+Tab) TO-220

更新时间:2025-11-22 15:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NTE
23+
39440
原厂授权一级代理,专业海外优势订货,价格优势、品种
NTE
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TE/泰科
2508+
/
226570
一级代理,原装现货
NTE ELECTRONICS
2023+
MODULE
147
主打螺丝模块系列
NA
23+
NA
6500
只做原装正品现货或订货假一赔十!
NTE54
25+
1
1
NTE
24+
con
10000
查现货到京北通宇商城
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
NTE
25+
电联咨询
7800
公司现货,提供拆样技术支持
2022+
31
全新原装 货期两周

NTE54数据表相关新闻