Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

High Voltage Rectifiers

The NTE517 is a silicon high voltage plastic Power Rectifier Diode. ·Controlled Avalanche Characteristic Combined with Ability to Dissipate Reverse Power\n·Low Forward Voltage Drop\n·Typical IR less than 0.1µA\n·High Overload Surge Capacity;

Zener Diode, 10 Watt ±5% Tolerance

Features:\n● Zener Voltage 3.9V to 200V\n● DO4 Stud Mount Package

Zener Diode, 10 Watt 짹5 Tolerance

Features: ● Zener Voltage 3.9V to 200V ● DO4 Stud Mount Package

Zener Diode, 10 Watt 짹5 Tolerance

Features: ● Zener Voltage 3.9V to 200V ● DO4 Stud Mount Package

Zener Diode, 10 Watt 짹5 Tolerance

Features: ● Zener Voltage 3.9V to 200V ● DO4 Stud Mount Package

Zener Diode, 10 Watt 짹5 Tolerance

Features: ● Zener Voltage 3.9V to 200V ● DO4 Stud Mount Package

Zener Diode, 10 Watt 짹5 Tolerance

Features: ● Zener Voltage 3.9V to 200V ● DO4 Stud Mount Package

Zener Diode, 10 Watt 짹5 Tolerance

Features: ● Zener Voltage 3.9V to 200V ● DO4 Stud Mount Package

Zener Diode, 10 Watt 짹5 Tolerance

Features: ● Zener Voltage 3.9V to 200V ● DO4 Stud Mount Package

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.