丝印代码：BC517；NPN Darlington Transistor

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NPN Darlington Transistor

Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR)

GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.

NPN Darlington Transistor

Features • This device is designed for applications requiring extremely high current gain at currents to 1.0 A. • Sourced from process 05.

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR

The BC516(PNP) and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

NPN Silicon Darlington Transistor

NPN Silicon Darlington Transistor TO-92 Plastic Package Weight approx. 0.19g

NPN Silicon Darlington Transistor (High current gain High collector current)

NPN Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 516 (PNP)

Darlington Transistors

Darlington Transistors NPN Silicon

NPN 双极达林顿晶体管

此 NPN 双极达林顿晶体管适用于打印字锤、继电器、电磁阀和灯驱动器等开关应用。该器件采用 TO-92 封装，适用于中等功率应用。 • Pb-Free Packages are Available;

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN DARL 30V 1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Darlington Transistor

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TO-92 PACKAGE

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NPN Darlington Transistor

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Darlington Transistors NPN Silicon

文件：71.35 Kbytes Page：6 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：40.72 Kbytes Page：2 Pages

Darlington Transistors

文件：82.45 Kbytes Page：6 Pages

NPN Darlington Transistor

Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device

General Purpose NPN Epitaxial Planar Transistor

Description • The BC517A3 is a darlington amplifier transistor • Pb-free package

NPN Darlington Transistor

Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN DARL 30V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Darlington Transistors NPN Silicon

文件：71.35 Kbytes Page：6 Pages

Darlington Transistors

文件：82.45 Kbytes Page：6 Pages

TO-92 PACKAGE

文件：31.4 Kbytes Page：1 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：40.72 Kbytes Page：2 Pages

NPN Darlington Transistor

文件：621.37 Kbytes Page：6 Pages

Bipolar Transistor

Darlington Transistors NPN Silicon

文件：71.35 Kbytes Page：6 Pages

达林顿三极管

Darlington Transistors NPN Silicon

文件：71.35 Kbytes Page：6 Pages

Darlington Transistors NPN Silicon

文件：71.35 Kbytes Page：6 Pages

Darlington Transistors NPN Silicon

文件：71.35 Kbytes Page：6 Pages

Darlington Transistors NPN Silicon

文件：71.35 Kbytes Page：6 Pages

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.