GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAlAs-IR-Lumineszenzdioden (880 nm)

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UV-Lumineszensdiode

UV Light Emitting Diode Features • UV-LED with Peakwavelength 395nm • Narrow emission angle • Hermetically sealed package • ESD-Classification Class 1 according to MIL-STD-883E Applications • Curing of glue and laquer • Recognition of safety features of money bills

UV Light Emitting Diode

UV Light Emitting Diode • UV-LED with Peakwavelength 395nm\n• Narrow emission angle\n• Hermetically sealed package\n• ESD-Classification Class 1 according to MIL-STD-883E\n\nApplications\n• Curing of glue and laquer\n• Recognition of safety features of money bills;

GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

GaAlAs INFRARED EMITTER

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

GaAlAs INFRARED EMITTER

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

SFH484-2 - 红外发射器, 8 °, T-1 3/4 (5mm), 100 mA, 1.5 V, 600 ns, 500 ns

The SFH484-2 from Osram is a radial leaded GaAlAs infrared emitter with 880nm wavelength. This device is used for IR remote control, sensor technology, discrete interrupters and smoke detectors. ·Standard diode case style of T-1 3/4 (5mm)\n·Spectral match with silicon photodetectors\n·Highly reliable and efficient\n·UL version available\n·Forward current If of 100mA\n·Forward voltage of 1.5V at IF= 100mA\n·Viewing angle of 8°\n·Rise time of 600ns\n·Fall time of 500ns\n·Operating temperature;

GaAlAs INFRARED EMITTER

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

GaAlAs-IR-Lumineszenzdioden (880 nm)

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Infrared Emitter

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Infrared Emitter (940 nm)

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Infrared Emitter

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GaAlAs-IR-Lumineszenzdioden (880 nm)

文件：155.09 Kbytes Page：10 Pages

GaAlAs-IR-Lumineszenzdioden (880 nm)

文件：155.09 Kbytes Page：10 Pages

GaAlAs-IR-Lumineszenzdioden (880 nm)

文件：155.09 Kbytes Page：10 Pages

Infrared Emitter (940 nm)

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Infrared Emitter (940 nm)

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Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features:

Precision Rail-to-Rail Input & Output Operational Amplifiers

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Precision Rail-to-Rail Input & Output Operational Amplifiers

文件：522.84 Kbytes Page：20 Pages