Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

Silicon Complementary Transistors Audio Frequency Driver

Silicon Complementary Transistors Audio Frequency Driver

Silicon Complementary Transistors Audio Frequency Driver

Silicon Complementary Transistors Audio Frequency Driver

Silicon NPN Transistor High Voltage Power Amp/Switch

Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ens

Silicon NPN Transistor Audio Power Amp, Switch

Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switch mode applications. Features: ● Fast Turn–Off Times

Silicon NPN Transistor Audio Power Amp, Switch

Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuit where fall time is critical. This device is particularly suited for line operated switchmode applications. Applications: ● Switching Regulat

Silicon NPN Transistor Power Amp, Switch

Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Times

Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications

Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: ● High Safe Operating Area: 2A @ 80V ● High DC Current Gain: hFE = 15 Min @ IC = 8A

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-3 packaging • Large collector current • Low collector saturation voltage • High power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in DC-DC converter • Driver of solenoid or motor

Integrated Circuit NMOS, 8-Bit Microprocessor (MPU), 4MHz

Description: The NTE3880 is a third generation single chip microprocessor with unrivaled computational power. This increased computational power results in higher system through–put and more efficient memory utilization when compared to second generation microprocessors. In addition it is very ea

Integrated Circuit NMOS, Parallel I/O Interface (PIO), 4MHz

Description: The NTE3881 Parallel I/O Circuit (PIO) is a programmable, two port device which provides a TTL compatible interface between peripheral devices and the NTE3880. The Central Processing Unit (CPU) can configure the NTE3881 to interface with a wide range of peripheral devices with no oth

Integrated Circuit NMOS, Counter Timer Control (CTC)

Description: The NTE3882 Counter Timer Circuit (CTC) is a programmable, four channel device in a 28–Lead DIP type package that provides counting and timing functions for the NTE3880. The NTE3880 configures the NTE3882’s four independent channels to operate under various modes and conditions as re

Silicon NPN Transistor Horizontal Output

Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: ● Collector–Emitter Voltage: VCEX = 1500V ● Glass Passivated Base–Collector Junction ● Forward Bias Safe Operating Area @ 50µs = 20A, 300

Z80 CPU PERIPHERALS