Silicon NPN Transistor RF & Microwave Transistor

Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60 Characterized from 125 to 175MHz Includes Series Equivalent Impedances

RF transistors

Low Noise, Low Drift, Low Power 3-Axis MEMS Accelerometer

GENERAL DESCRIPTION The digital output ADXL3591 is a low noise density, low 0 g offset drift, low power, 3-axis microelectromechanical system (MEMS) accelerometer with selectable measurement ranges. The ADXL359 supports the ±10 g, ±20 g, and ±40 g ranges. The ADXL359 offers industry leading n

Flat screw terminals Heavy-duty version with grooved flat terminals, 1-pole

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1310 & 1550 nm Standard and Ultra Fiber Optic Delay Line Modules

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Zero Dispersion Modules

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Dispersion Compensation Module

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