Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: ● Specified 28V, 175MHz Characteristics − Output Power = 7.0 Watts Minimum Gain = 8.4dB Efficiency = 60 ● Characterized from

RF transistors

5x7mm Low Cost Surface Mount VCXO

♦ Frequency Stability to ±20 PPM ♦ +3.3Vdc or +5.0Vdc Operation ♦ HCMOS Output ♦ Operating Temperature to –40°C to +85°C ♦ Output Enable Standard ♦ Tape & Reel Packaging ♦ Pb Free

(22.2 mm) Conductive Plastic Potentiometer, Bushing Mount Type

FEATURES • 7/8 diameter single turn • Compact size, advanced design technology • Offer a cost effective solution to your potentiometer requirements • Suitable model for all industrial applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

7/8 diameter single turn

FEATURES • 7/8 diameter single turn • Compact size, advanced design technology • Offer a cost effective solution to your potentiometer requirements • Suitable model for all industrial applications • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Silver Oxide Batteries

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3M??Power Clamp Branch Connector

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