Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: ● Specified 28V, 175MHz Characteristics − Output Power = 7.0 Watts Minimum Gain = 8.4dB Efficiency = 60 ● Characterized from

RF transistors

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM357DX contains diodes with performance characteristics designed specifically for applications from 16kHz to 70kHz. The BYM357DX series is

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM357X contains diodes with performance characteristics designed specifically for applications from 16kHz to 70kHz The BYM357X series is supplied

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

Silicon epitaxial planer type

Silicon epitaxial planar type For CATV tuner ■ Features • Large capacitance ratio • Small series resistance rD

Silicon epitaxial planer type

Silicon epitaxial planar type For CATV tuner ■ Features • Large capacitance ratio • Small series resistance rD