Silicon Complementary Transistors Audio Power Amp, Switch

Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement Mode Applications: • High Power Switching • Motor Control

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement Mode Applications: • High Power Switching • Motor Control

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement Mode Applications: • High Power Switching • Motor Control

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

IEC60309 PIN & SLEEVE DEVICES • LIGHT & STAGE DEVICES

文件：401.49 Kbytes Page：2 Pages