Silicon Complementary Transistors TV Sound Output, TV Vertical Output, AF Driver Output

Features: • High Voltage: VCEO = 160V • High Continuous Collector Current Capability Applications: • Vertical Deflection Output & Sound Output Applications for Line Operated TV

Silicon NPN RF Power Transistor 40W @ 175MHz

Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.

Silicon NPN RF Power Transistor 40W @ 175MHz

Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.

Silicon NPN Transistor RF Power Output

Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: ● Output Powe

Optoisolator NPN Transistor Output

Features: Current Transfer Ratio: CTR: 50 Min @ IF = 5mA, VCE = 5V High Input–Output Isolation Voltage: VISO = 5000Vrms Compact DIP Package: NTE3220: 2–Channel Type (8–Lead DIP) NTE3221: 4–Channel Type (16–Lead DIP) Applications: Computer Terminals System Ap

Optoisolator NPN Transistor Output

Features: Current Transfer Ratio: CTR: 50 Min @ IF = 5mA, VCE = 5V High Input–Output Isolation Voltage: VISO = 5000Vrms Compact DIP Package: NTE3220: 2–Channel Type (8–Lead DIP) NTE3221: 4–Channel Type (16–Lead DIP) Applications: Computer Terminals System Ap

Optoisolator NPN Transistor Output

Description: The NTE3222 is an optically coupled isolator in a 4–Lead DIP type package containing a GaAs light emitting diode and an NPN silicon phototransistor. Features: ● High Isolation Voltage ● High Collector–Emitter Voltage ● High Speed Switching Applications: ● Power Supplies ● Tele

Silicon Complementary Transistors General Purpose

Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

Silicon Complementary Transistors General Purpose

Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

Silicon NPN RF Power Transistor 50W @ 30MHz

Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency =

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time

Silicon NPN Transistor Power Amp, Switch

Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching

Silicon NPN Transistor RF Power Amp, CB

Description: The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: ● Specified 12.5V, 28MHz Charac