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MJE270晶体管资料

  • MJE270别名:MJE270三极管、MJE270晶体管、MJE270晶体三极管

  • MJE270生产厂家

  • MJE270制作材料:Si-N+Darl

  • MJE270性质

  • MJE270封装形式:直插封装

  • MJE270极限工作电压:100V

  • MJE270最大电流允许值:2A

  • MJE270最大工作频率:>6MHZ

  • MJE270引脚数:3

  • MJE270最大耗散功率:15W

  • MJE270放大倍数:β>1500

  • MJE270图片代号:B-21

  • MJE270vtest:100

  • MJE270htest:6000100

  • MJE270atest:2

  • MJE270wtest:15

  • MJE270代换 MJE270用什么型号代替:BDT61B...C,BDW53C...D,2SD837B,

MJE270价格

参考价格:¥1.1240

型号:MJE270G 品牌:ONSemi 备注:这里有MJE270多少钱,2026年最近7天走势,今日出价,今日竞价,MJE270批发/采购报价,MJE270行情走势销售排行榜,MJE270报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE270

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

ONSEMI

安森美半导体

MJE270

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

MOTOROLA

摩托罗拉

MJE270

NPN PLASTIC POWER TRANSISTOR

MJE270 NPN PLASTIC POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

TEL

MJE270

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

ETC

知名厂家

MJE270

NPN PLASTIC POWER TRANSISTOR

TRANSYS

MJE270

PLASTIC POWER TRANSISTOR

CDIL

MJE270

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 100V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJE270

PLASTIC POWER TRANSISTOR

文件:526.1 Kbytes Page:3 Pages

CDIL

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN DARL 100V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

NTE

Silicon planar type

文件:49.05 Kbytes Page:4 Pages

PANASONIC

松下

Silicon planar type

文件:41.87 Kbytes Page:2 Pages

PANASONIC

松下

Silicon planar type

文件:41.87 Kbytes Page:2 Pages

PANASONIC

松下

MJE270产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Polarity:

    NPN

  • IC Continuous (A):

    2

  • V(BR)CEO Min (V):

    100

  • VCE(sat) Max (V):

    2

  • hFE Min (k):

    1.5

  • fT Min (MHz):

    6

  • Package Type:

    TO-225-3

更新时间:2026-5-20 15:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
23+
TO-225AATO-126
24190
原装正品代理渠道价格优势
ON
22+
SOP
3000
原装正品,支持实单
三年内
1983
只做原装正品
ON
24+
TO-225
85000
ON
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON/安森美
23+
SMD
8000
只做原装现货
ON(安森美)
25+
TO-225-3
500000
源自原厂成本,高价回收工厂呆滞
ST
26+
TO-126
60000
只有原装 可配单
ST
25+
TO-126
20000
原装
MOTOROLA
26+
原厂封装
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订

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