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MJE270晶体管资料

  • MJE270别名:MJE270三极管、MJE270晶体管、MJE270晶体三极管

  • MJE270生产厂家

  • MJE270制作材料:Si-N+Darl

  • MJE270性质

  • MJE270封装形式:直插封装

  • MJE270极限工作电压:100V

  • MJE270最大电流允许值:2A

  • MJE270最大工作频率:>6MHZ

  • MJE270引脚数:3

  • MJE270最大耗散功率:15W

  • MJE270放大倍数:β>1500

  • MJE270图片代号:B-21

  • MJE270vtest:100

  • MJE270htest:6000100

  • MJE270atest:2

  • MJE270wtest:15

  • MJE270代换 MJE270用什么型号代替:BDT61B...C,BDW53C...D,2SD837B,

MJE270价格

参考价格:¥1.1240

型号:MJE270G 品牌:ONSemi 备注:这里有MJE270多少钱,2026年最近7天走势,今日出价,今日竞价,MJE270批发/采购报价,MJE270行情走势销售排行榜,MJE270报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE270

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

ONSEMI

安森美半导体

MJE270

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

MOTOROLA

摩托罗拉

MJE270

NPN PLASTIC POWER TRANSISTOR

MJE270 NPN PLASTIC POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

TEL

MJE270

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

ETC

知名厂家

MJE270

NPN PLASTIC POWER TRANSISTOR

TRANSYS

MJE270

PLASTIC POWER TRANSISTOR

CDIL

MJE270

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 100V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJE270

PLASTIC POWER TRANSISTOR

文件:526.1 Kbytes Page:3 Pages

CDIL

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN DARL 100V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

NTE

Silicon planar type

文件:49.05 Kbytes Page:4 Pages

PANASONIC

松下

Silicon planar type

文件:41.87 Kbytes Page:2 Pages

PANASONIC

松下

Silicon planar type

文件:41.87 Kbytes Page:2 Pages

PANASONIC

松下

MJE270产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Polarity:

    NPN

  • IC Continuous (A):

    2

  • V(BR)CEO Min (V):

    100

  • VCE(sat) Max (V):

    2

  • hFE Min (k):

    1.5

  • fT Min (MHz):

    6

  • Package Type:

    TO-225-3

更新时间:2026-5-19 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-126
942
原厂订货渠道,支持BOM配单一站式服务
onsemi(安森美)
25+
TO-126
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON/安森美
24+
TSSOP
10000
原装进口只做订货 寻找优势渠道合作
ST
26+
TO-126
60000
只有原装 可配单
ONSEMI/安森美
2450+
TO-225-3
9850
只做原厂原装正品现货或订货假一赔十!
ON(安森美)
23+
TO-225-3
13524
公司只做原装正品,假一赔十
Onsemi
22+
TO-225
25000
专业配单,原装正品假一罚十,代理渠道价格优
MOTOROLA
26+
原厂封装
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税

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