MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: Dynamic dv/dt Rating +175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

N-Channel Selector Guide

The NTE2395 is a 60V N-channel enhancement mode Transistor designed for high speed switching applications. ·Dynamic dv/dt rating\n·Fast switching\n·Ease of paralleling\n·Simple drive requirements\n·±20V Gate to Source voltage (VGS)\n·1°C/W Thermal resistance, junction to case\n·62°C/W Thermal resistance, junction to ambient;

NPN SILICON EPITAXIAL POWER TRANSISTOR

NPN SILICON EPITAXIAL POWER TRANSISTOR Designed For Relay drive and DC-DC Converter.

36-40GHz Low Noise Very High Gain Amplifier

Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electr

MAX2394/MAX2395 Evaluation Kits

General Description The MAX2394/MAX2395 evaluation kits (EV kits) simplify evaluation of the MAX2394/MAX2395 quasi-direct modulator ICs for use in WCDMA/UMTS transmitters. The kit enables testing of the device’s RF performance and requires no additional support circuitry. The board includes input

TH13 TH23

High integration time meter reliable. High performance, adopting the ultra-compact synchronous motor. Corresponding to the CE marking. ■ Features 1. High-performance compact synchronous motor adoption. 2. Design in a compact size is refreshing. 3. simple wire connection. 4.