NPN SILICON EPITAXIAL POWER TRANSISTOR

NPN SILICON EPITAXIAL POWER TRANSISTOR Designed For Relay drive and DC-DC Converter.

2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE.

36-40GHz Low Noise Very High Gain Amplifier

Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electr

MAX2394/MAX2395 Evaluation Kits

General Description The MAX2394/MAX2395 evaluation kits (EV kits) simplify evaluation of the MAX2394/MAX2395 quasi-direct modulator ICs for use in WCDMA/UMTS transmitters. The kit enables testing of the device’s RF performance and requires no additional support circuitry. The board includes input

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: Dynamic dv/dt Rating +175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

TH13 TH23

High integration time meter reliable. High performance, adopting the ultra-compact synchronous motor. Corresponding to the CE marking. ■ Features 1. High-performance compact synchronous motor adoption. 2. Design in a compact size is refreshing. 3. simple wire connection. 4.