Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

Bi-Polar transistor Selector Guide

Silicon Complementary Transistors Digital w/2 Built-In 47k Bias Resistors

Digital w/2 Built–In 47k Bias Resistors Features: Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ) Small–Sized Package (TO92 type) Applications: Switching Circuit Inverter Interface Circuit Driver

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

Silicon Complementary Transistors High Current General Purpose Amp/Switch

High Current General Purpose Amp/Switch Features:
Low Saturation Voltage
Large Current Capacity and Wide ASO Applications:
Power Supplies
Relay Drivers
Lamp Drivers
Automotive Wiring

Silicon Complementary Transistors High Current General Purpose Amp/Switch

High Current General Purpose Amp/Switch Features:
Low Saturation Voltage
Large Current Capacity and Wide ASO Applications:
Power Supplies
Relay Drivers
Lamp Drivers
Automotive Wiring

Silicon NPN Transistor High Voltage Horizontal Deflection Output

Silicon NPN Transistor / High Voltage Horizontal Deflection Output

Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors

Features: ● Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) ● Small–Sized Package (TO92 type) Applications: ● Switching Circuit ● Inverter ● Interface Circuit ● Driver

Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors

Features: ● Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) ● Small–Sized Package (TO92 type) Applications: ● Switching Circuit ● Inverter ● Interface Circuit ● Driver

Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors

NTE2369 (NPN) NTE2370 (PNP) Features: Built–In Bias Resistor (R1= 4.7kΩ, R2= 4.7kΩ) Small–Sized Package (TO92 type) Applications: Switching Circuit Inverter Interface Circuit Driver

Complementary Transistors

Complementary Transistors

Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399)

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COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)