SiliconComplementaryTransistorsHighSpeedSwitch

HighSpeedSwitch Description: TheNTE2361(NPN)andNTE2362(PNP)complimentarysilicontransistorsaredesignedforgeneral–purposeamplifierandhighspeedswitchingapplications.Thehighgainofthesedevicesmakesitpossibleforthemtobedrivendirectlyfromintegratedcircuits.

SWITCH-MODETRANSFORMERGUIDE

CONSUMERPRODUCTS PulseoffersacompleterangeofSwitch-ModeTransformersinvarioustechnologies(slot,layerandtripleinsulationwire)usedforpowersuppliesintelevision,set-topboxes,satellitereceivers,DVDplayers,telephonechargers,andwhitegoods.Pulsealsooffersanewrangeo

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistorsdesignedforhighvoltageswitchingapplications. FEATURES •Lowon-stateresistance 2SK2361:RDS(on)=0.9ΩMAX.(VGS=10V,ID=5.0A) 2SK2362:RDS(on)=1.0ΩMAX.(VGS=10

NylonHoseClamps

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2A550k/1.1MHzSynchronousPWM/PSM

文件：275.41 Kbytes Page：10 Pages

N-Channel60-V(D-S)MOSFET

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