Silicon NPN Transistor AF PO, General Purpose Amp, Driver

Features: • High Breakdown Voltage: VCEO = 80V • Large IC Capacity: IC = 1A DC • Good hFE Linearity • Low Collector Saturation Voltage Applications: • Medium Power Output Stages • High–Voltage Drivers

Bi-Polar Transistor Selector Guide

MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications

Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications. Features: • Extremely Low Feedback Capacitance •

Field Effect Transistor Dual Gate N-Channel MOSFET

Field Effect Transistor Dual Gate N–Channel MOSFET

Silicon NPN Transistor Final RF Power Output for CB PO = 4W, 50MHz

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage (RBE = 10Ω), VCER . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Silicon NPN Transistor Linear Amplifier and High Speed Switch

Description: The NTE225 is a silicon NPN transistor in a TO39 type package (with flange) designed for industrial and commercial equipment. Typical applications include high voltage differential and operational amplifiers, high voltage inverters, and high voltage, low current switching and serie

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

Silicon NPN Transistor High Voltage Amp, Video Output

Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 350V (Min

JFETs (N & P Channel)

Silicon NPN Transistor High Voltage Amp, Video Output

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Bi-Polar transistor Selector Guide

Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp

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