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NTE221中文资料
NTE221数据手册规格书PDF详情
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.
Features:
• Extremely Low Feedback Capacitance
• High Power Gain
NTE221产品属性
- 类型
描述
- 型号
NTE221
- 制造商
NTE Electronics
- 功能描述
MOSFET N-CHANNEL DUAL GATE 20V IDSS=18MA TO-72 CASE VHF AMP/MIXER APPLICATIONS
- 制造商
NTE Electronics
- 功能描述
MOSFET-N-CHVHF AMP/MIX
- 制造商
NTE Electronics
- 功能描述
DUAL GATE RF MOSFET, N CH 20V, TO72; Transistor
- Type
RF MOSFET; Drain Source Voltage
- Vds
20V; Continuous Drain Current
- Id
18mA; Power Dissipation
- Pd
400mW; Noise Figure
- Typ
5dB; Operating Temperature
- Min
-65C; No. of
- Pins
3 ;RoHS
- Compliant
Yes
- 制造商
NTE Electronics
- 功能描述
Trans RF MOSFET N-CH 20V 4-Pin TO-72
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2022+ |
1 |
全新原装 货期两周 |
|||||
26+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
NTE221 价格
参考价格：￥80.5589
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NTE221 芯片相关型号
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