Silicon Complementary Transistors General Purpose Output & Driver

Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and conv

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be wr

Integrated Circuit MOS, Static 4K RAM, 300ns

文件：29.02 Kbytes Page：4 Pages

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes Page：1 Pages

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes Page：1 Pages

Shuguang Vacuum Tube 211

DESCRIPTION Directed heat cathode, 211 triode can be used in class A, B, C amplifying stage. 211 vacuum tube is compatible with GL-211, UV-211 and can be replaced each other.

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文件：5.0379 Mbytes Page：60 Pages

Modular Radio Telemetry System

文件：396.37 Kbytes Page：11 Pages

M8 Female 4 Pin Field Attachable

文件：178.27 Kbytes Page：2 Pages

Direct replacement for T3 쩌 Midget Edison Screw E10

文件：281.7 Kbytes Page：5 Pages

T-1 Subminiature Lamps

1024-wordX4-bit Static Random Access Memory

1024-wordX4-bit Static Random Access Memory

1024-wordX4-bit Static Random Access Memory

1024-wordX4-bit Static Random Access Memory