Description:

The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

Features:

• Access Time: 250ns

• Single 5V Supply Voltage

• Low Standby Current: 40mA Max

• TTL Compatible During Read and Program

• Fast Programming Algorithm

• Programming Voltage: 12V Typ