Germaniun PNP Transistor Audio Power Amplifier

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Germanium Transistors

Integrated Circuit Infrared Remote Control Preamp

Features: High Frequency Amplifier with a Control Range of 66dB Synchronous Demodulator and Reference Amplifier AGC Detector Pulse Shaper Q–Factor Killing of the Input Selectivity, which is Controlled by the AGC Circuit Input Voltage Limiter Absolute Maximum Ratings:

Integrated Circuit Infrared Remote Control Preamp

Features: High Frequency Amplifier with a Control Range of 66dB Synchronous Demodulator and Reference Amplifier AGC Detector Pulse Shaper Q–Factor Killing of the Input Selectivity, which is Controlled by the AGC Circuit Input Voltage Limiter Absolute Maximum Ratings:

Integrated Circuit Infrared Preamplifier

Description: The NTE1764 is an infrared preamplifier in a 14–Lead DIP type package and contains four main parts: the gain–controlled amplifier I, the amplifier II, the pulse–separating amplifier III, and the inverter IV. The amplifier I has a wide dynamic range and thus ensures interference

Integrated Circuit Infrared Preamplifier

Description:\nThe NTE1764 is an infrared preamplifier in a 14–Lead DIP type package and contains four main parts: the gain–controlled amplifier I, the amplifier II, the pulse–separating amplifier III, and the inverter IV.\nThe amplifier I has a wide dynamic range and thus ensures interference free o

Integrated Circuit Dual Channel Current Mode Controller

Description:\nThe NTE1765 is a high performance, fixed frequency, dual current mode controller in a 16–Lead DIP type package. This device is specifically designed for Off–Line and DC to DC converter applications offering the designer a cost effective solution with minimal external components. The NT

Integrated Circuit Dual Channel Current Mode Controller

Description: The NTE1765 is a high performance, fixed frequency, dual current mode controller in a 16–Lead DIP type package. This device is specifically designed for Off–Line and DC to DC converter applications offering the designer a cost effective solution with minimal external components. Th

Integrated Circuit Reversible Motor Driver

Description: The NTE1766 is a reversible motor driver in a 10–Lead SIP type package capable for directly driving a motor containing a brush, requiring reversible rotation. Features: • High Output Current: IOmax = 2.2A • Built–In Thermal Shutdown Circuit • Output Voltage Setting Te

Integrated Circuit Vertical Deflection Output Circuit for Color TV

Description: The NTE1767 is a vertical deflection output circuit in a 8–Lead SIP type package for use in Color TV applications of 22 inch or larger. This device requires no voltage–boosted pulses and, therefore, can be connected to a chrominance–video deflection circuit (NTE1793), deflection ci

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

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