N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line 200/150W, 500MHz, 50V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·N-Channel Enhancement Mode Device\n·Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)\n·MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ.\n·MRF176G;

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

The RF MOSFET Line 200/150W, 500MHz, 50V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·N–Channel Enhancement Mode MOSFET\n·Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix), Output Power — 150 W,Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)\n·MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)\n·Low ;

封装/外壳：375-04 包装：托盘 描述：FET RF 2CH 125V 225MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 200/150W, 500MHz, 50V

文件：397.9 Kbytes Page：12 Pages

The RF MOSFET Line 200/150W, 500MHz, 50V

文件：397.9 Kbytes Page：12 Pages

The RF MOSFET Line

文件：397.9 Kbytes Page：12 Pages

The RF MOSFET Line 200/150W, 500MHz, 50V

文件：963.08 Kbytes Page：13 Pages

封装/外壳：375-04 包装：托盘 描述：FET RF 2CH 125V 225MHZ 375-04 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 200/150W, 500MHz, 50V

文件：397.9 Kbytes Page：12 Pages

The RF MOSFET Line 200/150W, 500MHz, 50V

文件：397.9 Kbytes Page：12 Pages

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.