Integrated Circuit Power Amp, 550mW, for Battery Operated Radios

Description: The NTE1627 is a monolithic integrated circuit in a 9–Lead SIP type package consisting of a power amplifier intended for applications such as portable radios, tape recorders, and intercoms. It operates from a supply voltage of 6V and can deliver the rated output power of 350mW (THD

Integrated Circuit Power Amp, 550mW, for Battery Operated Radios

Description:\nThe NTE1627 is a monolithic integrated circuit in a 9–Lead SIP type package consisting of a power amplifier intended for applications such as portable radios, tape recorders, and intercoms. It operates from a supply voltage of 6V and can deliver the rated output power of 350mW (THD = 1

DSP1627 Digital Signal Processor

Active Clock Frequency The purpose of this advisory is to clarify the function of the serial I/O control registers in the DSP1620/27/28/29 devices. Specifically, it clarifies the function of the control register field that specifies the active clock frequency. The device data sheets state that th

Clarification to the Serial I/O Control Register Description for the DSP1620/27/28/29 Devices

Active Clock Frequency The purpose of this advisory is to clarify the function of the serial I/O control registers in the DSP1620/27/28/29 devices. Specifically, it clarifies the function of the control register field that specifies the active clock frequency. The device data sheets state that th

RAM Mapping 64x16 LCD Controller for I/O C

General Description HT1627 is a peripheral device specially designed for I/O type C used to expand the display capability. The max. display segment of the device are 1024 patterns (6416). It also supports serial interface, buzzer sound, Watchdog Timer or time base timer functions. The HT1627 is

LG1627BXC Clocked Laser Driver

Functional Description The LG1627BXC is a gallium arsenide (GaAs) laser diode driver to be used with direct modulated laser diodes in high-speed non-return-to-zero (NRZ) transmission systems. The device is made in a highperformance 0.9 µm gate GaAs hetero-junction FET technology that utilizes hig

6V/330mW single-channel power amplifier

INTEGRATED CIRCUIT PINOUTS