N.Channel JFET Silicon Transistor General Purpose AF Amplifier

N–Channel JFET Silicon Transistor General Purpose AF Amplifier

JFETs (N & P Channel)

Integrated Circuit Module - Hybrid, Dual, Audio Power Amplifier, 15W/Ch, 2 Power Supplies Required

Integrated Circuit Module – Hybrid, Dual, Audio Power Amplifier, 15W/Ch, 2 Power Supplies Required

Integrated Circuit Module - Dual, Audio Power Amplifier, 25W/Channel, 2 Power Supplies Required

Integrated Circuit Module – Dual, Audio Power Amplifier, 25W/Channel, 2 Power Supplies Required

Integrated Circuit Module, Hybrid, Audio Power Amp, 40W, 2 Power Supplies Req?셝

Integrated Circuit Module, Hybrid, Audio Power Amp, 40W, 2 Power Supplies Req’d

Integrated Circuit Module − Hybrid, Audio Power Amp 70 Watt, 2 Power Supplies Required

Features: • Minimum Output Power − 70W • Dual Power Supply − Single Channel • Thick Film Hybrid • Load Shorting Protector

Integrated Circuit Module, Hybrid, Dual Driver for 40W to 50W Audio Power Amp

Integrated Circuit Module, Hybrid, Dual Driver for 40W to 50W Audio Power Amp

Integrated Circuit Module, Hybrid, Dual Driver for 80W to 90W Audio Power Amp

Features: • Current Mirror Circuit Providing Low Distortion • 2 Channel Package • Dual Power Supply Operation • Small Sized Package

Integrated Circuit Module – Dual, Audio Power Amplifier, 25W/Channel, 2 Power Supplies Required

Integrated Circuit Module, Hybrid, Audio Power Amp, 40W, 2 Power Supplies Req’d

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

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3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages

Thick Film Hybrid IC(2 Power 2 Channel 10 to 30 W, AF Power AMP)

2 POWER 2 CHANNEL 10 to 30W min AF POWER AMP

2 POWER 2 CHANNEL 10 to 30W min AF POWER AMP

Power Amplifier 2 x 15W