Integrated Circuit Audio Power Amp, 4.4 Watts

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, V9−2 . . . . . . . . . . . . . . . . . . . . . . . . . 18V Supply Current, Itot . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . .

Integrated Circuit Audio Power Amp, 4.4 Watts

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)\nSupply Voltage, V9−2 . . . . . . . . . . . . . . . . . . . . . . . . . 18V\nSupply Current, Itot . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A\nPower Dissipation, PT . . . . . . . . .  . . . . . . . . . . . . . . . 4.5

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Dual JFET Input Precision High Speed Op Amp?

文件：175.73 Kbytes Page：3 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages

CCD Video Camera Signal Processor ICs

GROUND RULES FOR HIGH SPEED CIRCUITS