Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Lower and Tighter VSD

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

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MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV20N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Po

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Lower and Tighter VSD

Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ

Power MOSFET

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Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK

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N-Channel 6 0-V (D-S) MOSFET

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N-Channel 60-V (D-S) MOSFET

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Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

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60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

N-Channel 60-V (D-S) MOSFET

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20A mps,60 Volts N-CHANNEL MOSFET

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Fast Switching

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