isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

文件：117.36 Kbytes Page：7 Pages

Power MOSFET 30 V, 40 A, Single N?묬hannel, DPAK/IPAK

文件：90.29 Kbytes Page：8 Pages

单 N 沟道，功率 MOSFET，30V，40A，13mΩ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Power MOSFET

文件：117.36 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.95 Kbytes Page：8 Pages

Power MOSFET 30 V, 40 A, Single N?묬hannel, DPAK/IPAK

文件：90.29 Kbytes Page：8 Pages

Power MOSFET 30 V, 40 A, Single N?묬hannel, DPAK/IPAK

文件：90.29 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes Page：8 Pages

Power MOSFET 30 V, 40 A, Single N?묬hannel, DPAK/IPAK

文件：90.29 Kbytes Page：8 Pages

Power MOSFET

文件：117.36 Kbytes Page：7 Pages

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4813 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4813 is Pb-free (meets ROHS & Sony 259 specifications). AO4813L is a Green Product orde

Cable Assembly, Microware Right Angle SMA (Male) Both Ends

文件：22.28 Kbytes Page：1 Pages

Graphite Brush

文件：269.82 Kbytes Page：1 Pages

MALE/FEMALE THREADED STANDOFFS

文件：310.8 Kbytes Page：1 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.97 Kbytes Page：8 Pages