Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

Power MOSFET 30 V, 63 A, Single N?묬hannel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 63A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

文件：122.02 Kbytes Page：8 Pages

单 N 沟道，功率 MOSFET，30V，63A，8mΩ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 63A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

Power MOSFET 30 V, 63 A, Single N?묬hannel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Contr

Power MOSFET

文件：122.02 Kbytes Page：8 Pages

Power MOSFET

文件：122.02 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.7 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.97 Kbytes Page：8 Pages

Power MOSFET

文件：122.02 Kbytes Page：8 Pages

ACT4808 DUAL TRANSCEIVERS FOR MACAIR A3818, A5690, A5232, A4905 & MIL-STD-1553

General Description: The Aeroflex Laboratories transceiver model ACT4808 is a new generation Dual monolithic transceiver which provides full compliance with Macair and MIL-STD-1553 data bus requirements. The model ACT4808 performs the front-end analog function of inputting and outputting data th

Power Transformers Fully Enclosed

文件：82.52 Kbytes Page：1 Pages

HIGH POWER SERIES

文件：230.53 Kbytes Page：1 Pages

HIGH POWER SERIES

文件：340.72 Kbytes Page：1 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.97 Kbytes Page：8 Pages