位置：首页 > IC中文资料 > NTD20P06HL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P-Channel 60-V (D-S) MOSFET 文件：987.97 Kbytes Page：8 Pages | VBSEMI 微碧半导体 |   | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -14A, RDS(ON) =125mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =175mW @VGS = -4.5V. Lead free product is acquired. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.36 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：441.65 Kbytes Page：4 Pages | CET 华瑞 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
1625 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON(安森美) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ON |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ONSEMI/安森美 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
|||
ON/安森美 |
21+ |
SOT-252 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
ON |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
ON |
21+ |
8080 |
只做原装,质量保证 |
NTD20P06HL规格书下载地址
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DdatasheetPDF页码索引
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