位置：首页 > IC中文资料第3757页 > NTB75N06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTB75N06 | PowerMOSFET 75AMPERES,60VOLTSRDS(on)=9.5mΩ Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •PowerSupplies •Converters •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTB75N06 | PowerMOSFET75Amps,60Volts,N−ChannelTO−220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •TheseDevicesarePb−FreeandareRoHSCompliant •NTBVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeR | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
PowerMOSFET75Amps,60Volts,N−ChannelTO−220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •TheseDevicesarePb−FreeandareRoHSCompliant •NTBVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeR | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET 75AMPERES,60VOLTSRDS(on)=9.5mΩ Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •PowerSupplies •Converters •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
POWERMOSFET75AMPS,60VOLTS,LOGICLEVEL PowerMOSFET75Amps,60Volts,LogicLevelN−ChannelTO−220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •Power | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
POWERMOSFET75AMPS,60VOLTS,LOGICLEVEL PowerMOSFET75Amps,60Volts,LogicLevelN−ChannelTO−220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •Power | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET 75AMPERES,60VOLTSRDS(on)=9.5mΩ Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •PowerSupplies •Converters •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET 75AMPERES,60VOLTSRDS(on)=9.5mΩ Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •PowerSupplies •Converters •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET75Amps,60Volts,N−ChannelTO−220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •TheseDevicesarePb−FreeandareRoHSCompliant •NTBVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeR | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel60-V(D-S)MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization: | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
FastSwitchingSpeed 文件：65.68 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel60-V(D-S)MOSFET 文件：1.27408 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
NTB75N06产品属性
- 类型
描述
- 型号
NTB75N06
- 功能描述
MOSFET 60V 75A N-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
36500 |
正品授权货源可靠 |
||||
ON |
6000 |
面议 |
19 |
D2PAK3LEAD |
|||
ON |
20+ |
D2PAK3LEAD |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ON/安森美 |
2024+实力库存 |
D2PAK |
20000 |
只做原厂渠道 可追溯货源 |
|||
ON/安森美 |
22+ |
TO-263 |
87362 |
终端免费提供样品 可开13%增值税发票 |
|||
ON/安森美 |
23+ |
SOT263 |
8000 |
只做原装现货 |
|||
ON/安森美 |
23+ |
SOT-263 |
24190 |
原装正品代理渠道价格优势 |
|||
ON |
23+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
ON |
23+ |
TO-263 |
35890 |
||||
ON |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
NTB75N06芯片相关品牌
NTB75N06规格书下载地址
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DdatasheetPDF页码索引
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