NSC800TM High-Performance Low-Power CMOS Microprocessor

文件：785.95 Kbytes Page：76 Pages

NSC800™ High-Performance Low-Power CMOS Microprocessor

General Description\nThe NSC800 is an 8-bit CMOS microprocessor that functions as the central processing unit (CPU) in National Semiconductor's NSC800 microcomputer family. National's microCMOS technology used to fabricate this device provides system designers with performance equivalent to comparab Fully compatible with Z80Éinstruction set:\n   Powerful set of 158 instructions\n   10 addressing modes\n   22 internal registers\nLow power: 50 mW at 5V VCC\nUnique power-save feature\nMultiplexed bus structure\nSchmitt trigger input on reset\nOn-chip bus controller and clock generator\nVariable po;

NSC800TM High-Performance Low-Power CMOS Microprocessor

文件：785.95 Kbytes Page：76 Pages

NSC800TM High-Performance Low-Power CMOS Microprocessor

文件：785.95 Kbytes Page：76 Pages

NSC800TM High-Performance Low-Power CMOS Microprocessor

NSC800TM High-Performance Low-Power CMOS Microprocessor

文件：785.95 Kbytes Page：76 Pages

NSC800TM High-Performance Low-Power CMOS Microprocessor

文件：785.95 Kbytes Page：76 Pages

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,