NP89N04MUK规格书应用电路库存现货价格瑞萨-IC资料网

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型号	功能描述	生产厂家企业	LOGO
NP89N04MUK	MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS
NP89N04MUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP89N04MUK-S18-AY	MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS
NP89N04NUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP89N04NUK-S18-AY	MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS
NP89N04PDK	40 V – 90 A – N-channel Power MOS FET Application: Automotive Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f	RENESAS 瑞萨	RENESAS
NP89N04PDK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.95mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP89N04PDK-E1-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f	RENESAS 瑞萨	RENESAS
NP89N04PDK-E2-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f	RENESAS 瑞萨	RENESAS
NP89N04PUK	MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS
NP89N04PUK	MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP89N04PUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.95mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP89N04PUK_V01	MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP89N04PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP89N04PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS
NP89N04PUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS
NP89N04PUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP89N04MUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP89N04MUK_15	MOS FIELD EFFECT TRANSISTOR 文件：123.93 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP89N04NUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP89N04NUK	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP89N04PDK	40 V – 90 A – N-channel Power MOS FET	RENESAS 瑞萨	RENESAS
NP89N04PDK_15	40 V ??90 A ??N-channel Power MOS FET Application: Automotive 文件：114.27 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP89N04PUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP89N04PUK	Nch Single Power MOSFET 40V 90A 2.95mohm MP-25ZP/TO-263 Automotive	RENESAS 瑞萨	RENESAS
NP89N04PUK_15	MOS FIELD EFFECT TRANSISTOR 文件：113 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

NP89N04产品属性

类型
描述
型号
NP89N04
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
MOS FIELD EFFECT TRANSISTOR

NP89N04供应商更多...

更新时间：2025-12-26 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	NP89N04PDK-E1-AY	RENESAS(瑞萨)/IDT	24+	TO2633	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市金芯世纪电子有限公司	NP89N04PUK	RENESAS/瑞萨	22+	TO-263	100000	代理渠道/只做原装/可含税	询价
深圳市芯皇电子有限公司	NP89N04MUK	RENESAS/瑞萨	22+	TO-220	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市星辰微电科技有限公司	NP89N04MUK	RENESAS/瑞萨	22+	TO-220	12500	瑞萨全系列在售,终端可出样品	询价
贸泽芯城（深圳）电子科技有限公司	NP89N04NUK-S18-AY	RENESAS/瑞萨	23+	TO-TO-220	33000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
洪芯国际半导体（深圳）有限公司	NP89N04MUK	NEC	25+	VQFN24	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市河锋鑫科技有限公司	NP89N04MUKS18AY	Renesas	22+	TO2203	9000	原厂渠道,现货配单	询价
深圳市安富世纪电子有限公司	NP89N04MUK	RENESAS/瑞萨	20+	TO-220	32500	现货很近!原厂很远!只做原装	询价
艾睿（深圳）半导体有限公司	NP89N04PUK-E1-AY	RENESAS/瑞萨	2447	TO263	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	NP89N04MUK	UTC/友顺	23+	TO-252	69820	终端可以免费供样,支持BOM配单!	询价

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深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
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深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP90N04NUK-S18-AY 类别分立半导体产品晶体管 - FET，MOSFET - 单个制造商 Renesas Electronics America Inc 包装：50 封装
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NP89N04产品属性

NP89N04供应商更多...

NP89N04芯片相关品牌

NP89N04规格书下载地址

NP89N04参数引脚图相关

NP89N04数据表相关新闻

NOVATEK

NP16N06QLK-E1-AY 瑞智芯 只有原装

NP90N04NUK-S18-AY 瑞智芯 只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

NPA1006假一罚十

NPA-730B-005D

DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

NP90N04NUK-S18-AY 瑞智芯只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商