型号 功能描述 生产厂家 企业 LOGO 操作
NP89N04PDK

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f

RENESAS

瑞萨

NP89N04PDK

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.95mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP89N04PDK

40 V – 90 A – N-channel Power MOS FET

RENESAS

瑞萨

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f

RENESAS

瑞萨

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed f

RENESAS

瑞萨

40 V ??90 A ??N-channel Power MOS FET Application: Automotive

文件:114.27 Kbytes Page:8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

更新时间:2026-3-14 16:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
25+23+
SMD
40151
绝对原装正品现货,全新深圳原装进口现货
RENESAS/瑞萨
24+
TO263
21574
郑重承诺只做原装进口现货
NEC
26+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
UTC/友顺
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
RENESAS/瑞萨
2447
TO263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RENESAS/瑞萨
20+
TO-220
32500
现货很近!原厂很远!只做原装
R
MP-25ZPTO-263
22+
6000
十年配单,只做原装
RENESAS/瑞萨
24+
TO263
60000
全新原装现货
RENESAS/瑞萨
23+
SMD
33000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择

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