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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 |   | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：304.32 Kbytes Page：12 Pages | RENESAS 瑞萨 | |
NP88N075产品属性
- 类型
描述
- 型号
NP88N075
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 88A I(D) | TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
9650 |
原装现货,当天可交货,原型号开票 |
|||
R |
24+ |
T0-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
08+ |
TO263-2 |
5600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2450+ |
TO263 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
RENESAS |
25+23+ |
TO-263 |
26990 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
22+ |
NA |
3000 |
原装正品,支持实单 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
RENESAS/瑞萨 |
23+ |
TO-220 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
24+ |
TO-263 |
8866 |
NP88N075芯片相关品牌
NP88N075规格书下载地址
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NP88N075数据表相关新闻
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别 分立半导体产品 晶体管 - FET，MOSFET - 阵列 制造商 Renesas Electronics America Inc 封装：8-PowerL
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板机接口压力传感器
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DdatasheetPDF页码索引
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